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Issue 9, 2011
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Device and SPICE modeling of RRAM devices

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We report the development of physics based models for resistive random-access memory (RRAM) devices. The models are based on a generalized memristive system framework and can explain the dynamic resistive switching phenomena observed in a broad range of devices. Furthermore, by constructing a simple subcircuit, we can incorporate the device models into standard circuit simulators such as SPICE. The SPICE models can accurately capture the dynamic effects of the RRAM devices such as the apparent threshold effect, the voltage dependence of the switching time, and multi-level effects under complex circuit conditions. The device and SPICE models can also be readily expanded to include additional effects related to internal state changes, and will be valuable to help in the design and simulation of memory and logic circuits based on resistive switching devices.

Graphical abstract: Device and SPICE modeling of RRAM devices

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Publication details

The article was received on 31 May 2011, accepted on 05 Jul 2011 and first published on 17 Aug 2011

Article type: Paper
DOI: 10.1039/C1NR10557D
Nanoscale, 2011,3, 3833-3840

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    Device and SPICE modeling of RRAM devices

    P. Sheridan, K. Kim, S. Gaba, T. Chang, L. Chen and W. Lu, Nanoscale, 2011, 3, 3833
    DOI: 10.1039/C1NR10557D

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