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Issue 12, 2010
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Thermal contraction in siliconnanowires at low temperatures

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Abstract

The thermal expansion effect of silicon nanowires (SiNW) in [100], [110] and [111] directions with different sizes is theoretically investigated. At low temperatures, all SiNW studied exhibit a thermal contraction effect due to the lowest energy of the bending vibration mode which has a negative effect on the coefficient of thermal expansion (CTE). The CTE in [110] direction is distinctly larger than the other two growth directions because of the anisotropy of the bending mode in SiNW. Our study reveals that CTE decreases with an increase of the structure ratio γ = length/diameter, and is negative in the whole temperature range with γ = 1.3.

Graphical abstract: Thermal contraction in silicon nanowires at low temperatures

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Article information


Submitted
24 Jun 2010
Accepted
29 Jul 2010
First published
11 Oct 2010

Nanoscale, 2010,2, 2864-2867
Article type
Paper

Thermal contraction in silicon nanowires at low temperatures

J. Jiang, J. Wang and B. Li, Nanoscale, 2010, 2, 2864
DOI: 10.1039/C0NR00437E

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