Hybrid formation of graphene oxide–POSS and their effect on the dielectric properties of poly(aryl ether ketone) composites

Abstract

An effective method was proposed to prepare low dielectric constant composites based on a hybrid of graphene oxide–POSS and fluoropoly(ether ether ketone) (FPEEK). Through the formation of amide between aminopropylisobutyl polyhedral oligomeric silsesquioxane (POSS-NH₂) and oxygen-containing groups (carboxyl groups) on graphene oxide (GO), the covalent functionalization of GO with POSS-NH₂ (POSS-NH₂–GO) hybrid was carried out, which is highly soluble in many organic solvents. The structure of the POSS-NH₂–GO hybrid was confirmed by FT-IR, Raman, XRD, TGA, XPS, and TEM. The POSS-NH₂–GO hybrid was well dispersed within the FPEEK polymer matrix to prepare POSS-NH₂–GO/FPEEK composite films by solution blending. The dielectric constants of the composites decreased with the increasing content of POSS-NH₂–GO hybrid, and a κ value of 2.01 was achieved with the incorporation of the hybrid, only 3.0 wt% could cause a 92.8% high enhancement in Young's modulus.