Solution process for fabricating CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co)/CdS p–n junctions and their applications in solar cells

Abstract

CuIn_0.9R_0.1(S,Se)₂ (R = Al, Ni, Co) thin films were obtained via a solution process based on homogeneous precursor solutions and selenization. The as-prepared thin films were characterized by XRD, EDS and SEM. The CdS buffer layer was deposited by a solution process on the CuIn_0.9R_0.1(S,Se)₂ (R = Al, Ni, Co) thin films, and Mo/CuIn_0.9R_0.1(S,Se)₂ (R = Al, Ni, Co)/CdS/i-ZnO/ITO/Al thin-film solar cells were fabricated. The efficiencies of the as-fabricated CuIn_0.9R_0.1(S,Se)₂ (R = Al, Ni, Co) thin-film solar cells were 4.33%, 2.38% and 1.98%, respectively.