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Issue 1, 2017
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High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

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Abstract

Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

Graphical abstract: High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

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Publication details

The article was received on 26 Apr 2016, accepted on 12 Oct 2016 and first published on 28 Oct 2016


Article type: Communication
DOI: 10.1039/C6NH00075D
Citation: Nanoscale Horiz., 2017,2, 37-42

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    High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

    M. Tsai, M. Li, Y. Shi, L. Chen, L. Li and J. He, Nanoscale Horiz., 2017, 2, 37
    DOI: 10.1039/C6NH00075D

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