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Issue 1, 2019

Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs

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Abstract

Near-infrared light-emitting diodes (LEDs) show potential for telecommunication and medical applications. Quantum dot nanocrystals (QDs), specifically lead chalcogenides, are candidate LED materials since they exhibit tuneable luminescence across the whole near-infrared region, but their surface structure must be carefully controlled to achieve efficient emission. We demonstrate an efficient donor–acceptor QD system by embedding low-energy QDs with high photoluminescence quantum efficiency (PLQE) into a matrix of higher-energy QDs with lower PLQE. We find that the overall PLQE of densely packed cross-linked QD films can be improved by the incorporation of a relatively small fraction of well-passivated acceptor QDs, also leading to improved LED performance. Excitations are transferred into the isolated low-energy acceptor QDs, where they recombine with high radiative efficiency.

Graphical abstract: Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs

Supplementary files

Article information


Submitted
11 Sep 2018
Accepted
03 Oct 2018
First published
09 Oct 2018

Mater. Horiz., 2019,6, 137-143
Article type
Communication

Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs

Nathaniel. J. L. K. Davis, J. R. Allardice, J. Xiao, A. Karani, T. C. Jellicoe, A. Rao and N. C. Greenham, Mater. Horiz., 2019, 6, 137 DOI: 10.1039/C8MH01122B

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