Issue 2, 2020

Crystallographic phase changes and damage thresholds of CsPbI3 microwire waveguides through continuous wave photoablation

Abstract

We investigate waveguide efficiency of CsPbI3 microwire waveguides and their photodegradation over a range of continuous wave laser excitation energies and intensities. Under modest laser input intensities <1 kW cm−2 we observe a wavelength dependent efficiency of light propagation in the waveguides. At increased power densities and wavelengths of 473 nm or shorter, microwires undergo photoablation into discrete fragments. Use of diffraction-limited excitation allowed localised cleavage of the microwires with observation of transient photoluminescence from degradation products. TEM analysis of the microwires revealed transformation from the yellow δ-phase to amorphous phases in the region of the photodamage with a degraded morphology consistent with efficient thermal transfer and induced melting.

Graphical abstract: Crystallographic phase changes and damage thresholds of CsPbI3 microwire waveguides through continuous wave photoablation

Supplementary files

Article information

Article type
Communication
Submitted
20 Feb 2020
Accepted
21 Apr 2020
First published
23 Apr 2020
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2020,1, 161-166

Crystallographic phase changes and damage thresholds of CsPbI3 microwire waveguides through continuous wave photoablation

K. O. Russell, M. A. Osborne and A. A. E. Fisher, Mater. Adv., 2020, 1, 161 DOI: 10.1039/D0MA00043D

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