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Issue 6, 2008
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Ultra-sensitive detection of bacterial toxin with silicon nanowire transistor

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Abstract

Nanowire field effect transistors (nano-FET) were lithographically fabricated using 50 nm doped polysilicon nanowires attached to two small gold terminals separated from each other by a ∼150 nm gap to serve as the basis for electronic detection of bacteria toxins. The device characterizations, semiconducting properties and use in a robust and sensitive bio-molecular detection sensor of bacterial toxins were reported in this work. The device characteristics were demonstrated with varying gate and drain voltages. The bio-molecular detection was demonstrated using electrochemical impedance spectroscopy (EIS), using Staphylococcus aureus Enterotoxin B (SEB) as the target molecule. The detection limit of SEB was observed in the range of 10–35 fM.

Graphical abstract: Ultra-sensitive detection of bacterial toxin with silicon nanowire transistor

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Publication details

The article was received on 05 Feb 2008, accepted on 23 Apr 2008 and first published on 29 Apr 2008


Article type: Communication
DOI: 10.1039/B802036A
Lab Chip, 2008,8, 868-871

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    Ultra-sensitive detection of bacterial toxin with silicon nanowire transistor

    N. N. Mishra, W. C. Maki, E. Cameron, R. Nelson, P. Winterrowd, S. K. Rastogi, B. Filanoski and G. K. Maki, Lab Chip, 2008, 8, 868
    DOI: 10.1039/B802036A

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