Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 27th March 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 9, 2012
Previous Article Next Article

6% Efficiency Cu2ZnSnS4-based thin film solar cells using oxide precursors by open atmosphere type CVD

Author affiliations

Abstract

An open atmosphere type chemical vapor deposition (OA-CVD) method is one of the most effective methods for producing functional thin films. Especially, the OA-CVD method is a unique technique which is able to deposit metal oxide thin films by decomposition of vaporized raw materials released through a nozzle onto substrates in the air. Cu2ZnSnS4 (CZTS)-based thin films as absorber layers of thin film solar cells were fabricated by sulfurizing oxide precursor thin films synthesized by the OA-CVD method. Cu(C5H7O2)2, Zn(C5H7O2)2 and Sn(C5H7O2)2 were used as raw materials. The oxide precursor thin films were sulfurized at 520–560 °C in 5 vol% H2S balanced with N2. The formed CZTS-based thin films included oxygen with the composition ratio of O/(S + O) = 0.17–0.27 according to energy dispersive X-ray spectroscopy. The thin film solar cells using the CZTS-based thin films including oxygen [CZT(S,O) films] as the absorber layers were fabricated. The CZT(S,O) thin film solar cell had a stack structure of Al/Al-doped-ZnO/CdS/CZT(S,O)/Mo/soda-lime glass substrate. The efficiency of the CZT(S,O) thin film solar cells was 6.03%, which was the high efficiency in the reported value for CZTS-based thin film solar cells using oxide thin film precursors. It was found that the OA-CVD method is suited to fabricate the absorber layers of thin film solar cells.

Graphical abstract: 6% Efficiency Cu2ZnSnS4-based thin film solar cells using oxide precursors by open atmosphere type CVD

Back to tab navigation

Publication details

The article was received on 08 Dec 2011, accepted on 14 Dec 2011 and first published on 25 Jan 2012


Article type: Paper
DOI: 10.1039/C2JM16454J
Citation: J. Mater. Chem., 2012,22, 4021-4024

  •   Request permissions

    6% Efficiency Cu2ZnSnS4-based thin film solar cells using oxide precursors by open atmosphere type CVD

    T. Washio, T. Shinji, S. Tajima, T. Fukano, T. Motohiro, K. Jimbo and H. Katagiri, J. Mater. Chem., 2012, 22, 4021
    DOI: 10.1039/C2JM16454J

Search articles by author

Spotlight

Advertisements