Issue 44, 2011
From the journal:

Journal of Materials Chemistry

Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes†

Dae-Woo Jeon,‡a   Won Mook Choi,‡b   Hyeon-Jin Shin,b   Seon-Mi Yoon,b   Jae-Young Choi,*b   Lee-Woon Janga  and  In-Hwan Lee*a  

* Corresponding authors

a School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju, Korea
E-mail: ihlee@jbnu.ac.kr
Fax: +82-63-270-2305
Tel: +82-63-270-2290

b Graphene Center, Samsung Advanced Institute of Technology (SAIT), P.O. Box 111, Suwon, Korea
E-mail: jaeyoung88.choi@samsung.com
Fax: +82-31-280-9306
Tel: +82-31-280-9332

Abstract

InGaN/GaN nanopillar light-emitting diodes (LEDs) were fabricated using a highly homogeneous multilayer graphene (h-MLG) electrode. Four layers of h-MLG were prepared homogeneously using chemical vapor deposition and layer-by-layer transfer methods. The h-MLG exhibited excellent optical, structural and electrical properties for use as an electrode in the LEDs. The h-MLG was applied as a transparent top electrode by suspending only on the tip of nanopillar LEDs. The current-driven InGaN/GaN nanopillar LED with the h-MLG electrode was successfully operated at a high current injection and exhibited bright electroluminescence.

Graphical abstract: Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

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Article information

DOI
https://doi.org/10.1039/C1JM13640B
Article type
Paper
Submitted
30 Jul 2011
Accepted
08 Sep 2011
First published
12 Oct 2011

J. Mater. Chem., 2011,21, 17688-17692

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Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

D. Jeon, W. M. Choi, H. Shin, S. Yoon, J. Choi, L. Jang and I. Lee, J. Mater. Chem., 2011, 21, 17688 DOI: 10.1039/C1JM13640B

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