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Issue 46, 2011
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High performance foldable polymer thin film transistors with a side gate architecture

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Abstract

Foldable polymer thin film transistors gated by an ion gel dielectric were fabricated on a polymer substrate. Side gate structure was employed to simplify the fabrication process, which is a unique advantage of the transistors based on the ion gel dielectric. Utilizing the diffusion of crosslinkable oligomers in the P3HT thin films followed by UV gelation through a patterned mask, the ion gel made a strong bonding to the P3HT layer. Due to the deformable nature of the ion gel dielectric, the transistor arrays were electrically and mechanically stable at repeated folding events.

Graphical abstract: High performance foldable polymer thin film transistors with a side gate architecture

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Publication details

The article was received on 04 Jul 2011, accepted on 28 Sep 2011 and first published on 24 Oct 2011


Article type: Paper
DOI: 10.1039/C1JM13079J
Citation: J. Mater. Chem., 2011,21, 18804-18809

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    High performance foldable polymer thin film transistors with a side gate architecture

    S. W. Lee, B. S. Kim, J. J. Park, J. H. Hur, J. M. Kim, T. Sekitani, T. Someya and U. Jeong, J. Mater. Chem., 2011, 21, 18804
    DOI: 10.1039/C1JM13079J

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