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Issue 46, 2011
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High performance foldable polymer thin film transistors with a side gate architecture

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Abstract

Foldable polymer thin film transistors gated by an ion gel dielectric were fabricated on a polymer substrate. Side gate structure was employed to simplify the fabrication process, which is a unique advantage of the transistors based on the ion gel dielectric. Utilizing the diffusion of crosslinkable oligomers in the P3HT thin films followed by UV gelation through a patterned mask, the ion gel made a strong bonding to the P3HT layer. Due to the deformable nature of the ion gel dielectric, the transistor arrays were electrically and mechanically stable at repeated folding events.

Graphical abstract: High performance foldable polymer thin film transistors with a side gate architecture

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Supplementary files

Article information


Submitted
04 Jul 2011
Accepted
28 Sep 2011
First published
24 Oct 2011

J. Mater. Chem., 2011,21, 18804-18809
Article type
Paper

High performance foldable polymer thin film transistors with a side gate architecture

S. W. Lee, B. S. Kim, J. J. Park, J. H. Hur, J. M. Kim, T. Sekitani, T. Someya and U. Jeong, J. Mater. Chem., 2011, 21, 18804
DOI: 10.1039/C1JM13079J

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