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Issue 38, 2011
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Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors

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Abstract

We developed solution-processable tin-doped indium oxide (ITO) with a versatile patternability. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent micro-patterned electrodes defined by conventional photolithography, inkjet printing, and transfer molding. Such a versatile liquid-phase ITO material was successfully applied to demonstrate for the first time fully transparent all-oxide thin film transistors with the solution-processed gate/source/drain electrodes. This proof-of-concept study suggests that our solution-processable transparent conducting oxide can open the possibility of realizing fully transparent devices using all-solution processing.

Graphical abstract: Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors

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Publication details

The article was received on 05 Apr 2011, accepted on 20 Jul 2011 and first published on 16 Aug 2011


Article type: Paper
DOI: 10.1039/C1JM11418B
J. Mater. Chem., 2011,21, 14646-14654

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    Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors

    K. Song, Y. Jung, Y. Kim, A. Kim, J. K. Hwang, M. M. Sung and J. Moon, J. Mater. Chem., 2011, 21, 14646
    DOI: 10.1039/C1JM11418B

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