Solution processed non-volatile top-gate polymer field-effect transistors†
Abstract
This communication describes development of a top gate solution processable organic memory solution. Transistor memories (p-type and ambipolar) operating at voltages between 20 and 30 V with memory on–off ratios close to 103 at programming speeds of 1 ms were fabricated on glass and flexible PET substrates. Successful retention of the stored state for 1 week is also demonstrated.