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Issue 33, 2011
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Enhanced thermoelectric performance in In1−xGaxSb originating from the scattering of point defects and nanoinclusion

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Abstract

InSb-based semiconductors have not been regarded as a promising thermoelectric candidates before due to their high thermal conductivity. In this paper, Ga substitution and nanoinclusions poor in Ga were introduced to serve as phonon scattering centres. The nanoinclusions, possessing a heterogeneous isomorphic crystal structure with the matrix, contribute to the weakly influenced electrical transport and greatly depressed lattice thermal conductivity (κL). For the sample In0.9Ga0.1Sb, the κL is decreased by 53% and the ZT value is increased by 62% compared with pure InSb at 650 K. The highest ZT achieved was 0.73, which shows application perspectives at intermediate temperatures.

Graphical abstract: Enhanced thermoelectric performance in In1−xGaxSb originating from the scattering of point defects and nanoinclusion

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Supplementary files

Article information


Submitted
05 Feb 2011
Accepted
14 Jun 2011
First published
20 Jul 2011

J. Mater. Chem., 2011,21, 12398-12401
Article type
Paper

Enhanced thermoelectric performance in In1−xGaxSb originating from the scattering of point defects and nanoinclusion

Q. Zhang, Z. Xiong, J. Jiang, W. Li, G. Xu, S. Bai, P. Cui and L. Chen, J. Mater. Chem., 2011, 21, 12398
DOI: 10.1039/C1JM10542F

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