Indium-doped molybdenum oxide as a new p-type transparent conductive oxide

Abstract

New p-type transparent conductive oxide materials, MoO₃:In single crystal nanowires and amorphous films, are synthesized in this work. Both nanowires and amorphous films exhibit high optical transmittance, 80–88% for 80 nm thick films at 400–800 nm wavelength, and low resistivity (down to 5.98 × 10⁻⁴ Ω cm) suitable for photovoltaic device applications. The amorphous films are also deposited on flexible polyimide substrates and exhibit excellent electrical properties even after bending. Besides, p-MoO₃:In/i-ZnO/n-AZO devices are fabricated to demonstrate the potential for all-transparent flexible electronic applications.