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Issue 13, 2011
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Towards low-temperature preparation of air-stable hybrid light-emitting diodes

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Abstract

Spray pyrolysis of a ZnO electron transport layer for hybrid organic–inorganic light-emitting diodes (HyLEDs) was investigated at substrate temperatures (Ts) between 150 and 450 °C to understand the effect of temperature on film properties and device performance. Characterisation of ZnO thin films by X-ray Diffraction (XRD) and Atomic Force Microscopy (AFM) was performed and compared to the optoelectronic performance of HyLEDs with the architecture ITO/ZnO/F8BT/MoO3/Au. It was found that efficient devices can be obtained at temperatures as low as 250 °C as opposed to the most widely used 450 °C. These findings are significant for offering a route to low-cost, faster processing of air-stable light-emitting diodes.

Graphical abstract: Towards low-temperature preparation of air-stable hybrid light-emitting diodes

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Supplementary files

Article information


Submitted
25 Oct 2010
Accepted
10 Feb 2011
First published
23 Feb 2011

J. Mater. Chem., 2011,21, 4774-4777
Article type
Communication

Towards low-temperature preparation of air-stable hybrid light-emitting diodes

J. W. Ryan, E. Palomares and E. Martínez-Ferrero, J. Mater. Chem., 2011, 21, 4774
DOI: 10.1039/C0JM03636F

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