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Issue 7, 2011
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A general strategy to bismuth chalcogenide films by chemical vapor transport

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Abstract

Developing a low-cost, simple manufacturing process for highly efficient thermoelectric films is an intriguing topic for both chemists and materialists. In this work, a new strategy was introduced to synthesize bismuth chalcogenide films by chemical vapor transport on presynthesized Bi films, including Bi2Se3, Bi2Te3 and Bi2Te2.7Se0.3. Through delicate control of the chalcogen vapor pressure, highly qualified and (00l) oriented bismuth chalcogenide films, constructed by oriented nanoplates, were obtained. The (00l) orientation of the films will facilitate the transport of the carrier for bismuth chalcogenides. Thermoelectric properties of these films were also characterized. At room temperature, the power factors reach 3 μW cm−1 K−1, 18.7 μW cm−1 K−1, 24.6 μW cm−1 K−1 for Bi2Se3, Bi2Te3, Bi2Te2.7Se0.3 films, respectively. Besides, the average power factor of 31.2 μW cm−1 K−1 in the temperature range of 300–500 K for Bi2Te2.7Se0.3 films indicates the present chemical vapor transport process is a promising technique for thermoelectric films.

Graphical abstract: A general strategy to bismuth chalcogenide films by chemical vapor transport

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Article information


Submitted
20 Oct 2010
Accepted
07 Dec 2010
First published
23 Dec 2010

J. Mater. Chem., 2011,21, 2351-2355
Article type
Paper

A general strategy to bismuth chalcogenide films by chemical vapor transport

Z. Sun, S. Liufu, R. Liu, X. Chen and L. Chen, J. Mater. Chem., 2011, 21, 2351
DOI: 10.1039/C0JM03561K

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