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Issue 32, 2010
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ZnO based field-effect transistors (FETs): solution-processable at low temperatures on flexible substrates

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Abstract

A well-performing ZnO field-effect transistor (FET) on polyethylenenaphthalate (PEN) foil with solution-processed ZnO semiconductor and dielectric material is presented for the first time. In addition, we developed a route that allows preparation of the ZnO semiconductor layer simply from commercially available ZnO dissolved in aqueous ammonia in a single processing step. The material performance in FETs exceeds that of state of the art solution-processable ZnO materials at comparably low processing temperatures (≤150 °C). Polysilsesquioxanes are identified as physically and chemically suitable dielectric materials that also fulfill the criteria solution processability at low temperatures. Water and ethyllactate are used as “green” solvents.

Graphical abstract: ZnO based field-effect transistors (FETs): solution-processable at low temperatures on flexible substrates

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Publication details

The article was received on 17 May 2010, accepted on 23 Jun 2010 and first published on 12 Jul 2010


Article type: Communication
DOI: 10.1039/C0JM01477J
Citation: J. Mater. Chem., 2010,20, 6622-6625

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    ZnO based field-effect transistors (FETs): solution-processable at low temperatures on flexible substrates

    F. Fleischhaker, V. Wloka and I. Hennig, J. Mater. Chem., 2010, 20, 6622
    DOI: 10.1039/C0JM01477J

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