Morphology-tunable In2Se3nanostructures with enhanced electrical and photoelectrical performances viasulfur doping

Abstract

Highly ordered In₂Se₃ nanostructures with different morphologies were first fabricated via a simple and efficient thermal evaporation process. Through manipulating the growth driving force, the morphology of the In₂Se₃ nanostructures was varied from nanowire arrays, via nanotree arrays to nanowire bundles. Furthermore, the nanostructures were on-demand doped with sulfur by co-evaporating the dopant In₂S₃ precursor and In₂Se₃ powder during the growth. Electrical and photoelectrical studies based on individual undoped and doped In₂Se₃ nanowires revealed that sulfur doping leads to significant improvements in the transport and photoelectronic performances, such as enhancing the conductivity and improving the sensitivity to visible light. These excellent performances demonstrate that S-doped In₂Se₃ nanowires should offer great potential for next-generation device applications.