Issue 36, 2010

Selected-area in situ generation of highly fluorescent organic nanowires embedded in a polymer film: the solvent-vapor-induced self-assembly process

Abstract

The preparation of highly fluorescent one-dimensional (1D) nanostructures within a selected area of a solid substrate is a challenging requirement for the realization of optoelectronic nanodevices. We present a novel method for fabricating highly fluorescent organic nanowires (NWs) embedded in a variety of polymer films through the combined processes of photochemical lithography and solvent–vapor annealing (SVA). To achieve this, we designed and synthesized an acid-responsive organic fluorophore bearing a self-assembly moiety. The in situ self-assembly of this fluorophore into ultralong nanowires proceeds selectively in designated regions of the polymer matrix via a simple selected-area SVA process. The IV electrical characteristics of 2-(3′,5′-bis(trifluoromethyl)biphenyl-4-yl)-3-(6-3,5-bis(trifluoromethyl)phenyl)pyridine-3-yl)acrylonitrile (Py-CN-TFMBE) structures, self-assembled using the SVA method, were measured on a two-terminal electrode device. This unique fabrication approach, which combines photochemical lithography and SVA, eliminates the difficulties of transferring preformed 1D organic nanostructures to fixed locations on a substrate, thereby establishing a new method for the fabrication control of optoelectronic nanodevices.

Graphical abstract: Selected-area in situ generation of highly fluorescent organic nanowires embedded in a polymer film: the solvent-vapor-induced self-assembly process

Supplementary files

Article information

Article type
Paper
Submitted
31 Mar 2010
Accepted
14 Jun 2010
First published
09 Aug 2010

J. Mater. Chem., 2010,20, 7715-7720

Selected-area in situ generation of highly fluorescent organic nanowires embedded in a polymer film: the solvent-vapor-induced self-assembly process

J. W. Chung, B. An, F. Hirato, J. H. Kim, H. Jinnai and S. Y. Park, J. Mater. Chem., 2010, 20, 7715 DOI: 10.1039/C0JM00896F

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