Enhancement of the energy photoconversion efficiency through crystallographic etching of a c-plane GaN thin film†
Abstract
Using a simple and inexpensive crystallographic
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* Corresponding authors
a Taiwan International Graduate Program, Academia Sinica, 128 Academia Road, Section 2, Nangkang, Taipei, Taiwan
b Department of Chemistry, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, Taiwan
c
Institute of Atomic and Molecular Sciences, Np. 1, Roosevelt Road, Sec. 4, Taipei, Taiwan
E-mail:
chenkh@pub.iams.sinica.edu.tw
Fax: +886-2-2362-0200
Tel: +886-2-2362-0212
d Institute of Optoelectronic Science, National Taiwan Ocean University, 2 Pei-Ning Road, Keelung, Taiwan
e
Center for Condensed Matter and Sciences, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, Taiwan
E-mail:
chenlc@ccms.ntu.edu.tw
Fax: +886-2-2365-5404
Tel: +886-2-3366-5249
f Department of Chemistry, University of North Texas, 1155 Union Circle, #305070 Denton Tx
g Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA
Using a simple and inexpensive crystallographic
A. M. Basilio, Y. Hsu, W. Tu, C. Yen, G. Hsu, O. Chyan, Y. Chyan, J. Hwang, Y. Chen, L. Chen and K. Chen, J. Mater. Chem., 2010, 20, 8118 DOI: 10.1039/C0JM00704H
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