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Issue 13, 2010
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Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors

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Abstract

We report on photo-excited trap-charge-collection spectroscopy as a direct probe of the traps in organic field-effect transistors (OFETs). Monochromatic photon beams transmitted through the working channels of 5 V operating pentacene-OFETs with 60 nm thick Al2O3 dielectrics liberate interface charges trapped at the matched energy level while the oxide surfaces were prepared with various self-assembled monolayers (SAMs). The density of states (DOS) of traps is directly mapped as a function of the photon energy by tracking the change in the threshold voltage. While conventional electrical stability measurements qualitatively support our trap DOS spectroscopy results, our direct measurement technique provides a powerful tool for quantitative analysis of the nature and density of interfacial traps in field-effect transistor devices.

Graphical abstract: Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors

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Article information


Submitted
20 Oct 2009
Accepted
17 Dec 2009
First published
21 Jan 2010

J. Mater. Chem., 2010,20, 2659-2663
Article type
Paper

Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors

K. Lee, B. H. Lee, K. H. Lee, J. H. Park, M. M. Sung and S. Im, J. Mater. Chem., 2010, 20, 2659
DOI: 10.1039/B921636G

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