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Issue 13, 2010
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Engineering of the dielectric–semiconductor interface in organic field-effect transistors

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Abstract

With the advances of organic field-effect transistors (OFETs), the interface between semiconductors and dielectrics has received much attention due to its dramatic effects on the morphology and charge-transport of organic semiconductors in OFETs. The purpose of this review is to give an overview of the recent progress in the engineering of the dielectric–semiconductor interface in OFETs. The interface-dependent performances of OFETs are reviewed, and interfacial control methods are especially dealt with an aim to solve interfacial effects. Finally, novel applications of the dielectric–semiconductor interface for achieving multifunctions are summarized to offer a clear map of interface engineering in OFETs.

Graphical abstract: Engineering of the dielectric–semiconductor interface in organic field-effect transistors

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Article information


Submitted
15 Oct 2009
Accepted
21 Dec 2009
First published
03 Feb 2010

J. Mater. Chem., 2010,20, 2599-2611
Article type
Feature Article

Engineering of the dielectric–semiconductor interface in organic field-effect transistors

X. Sun, C. Di and Y. Liu, J. Mater. Chem., 2010, 20, 2599
DOI: 10.1039/B921449F

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