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Issue 6, 2008
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Enhancing photoluminescence quenching and photoelectric properties of CdSequantum dots with hole accepting ligands

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Abstract

CdSe quantum dots have been encapped with aromatic ligands: α-toluenethiol, thiophenol, and p-hydroxythiophenol to enhance the photoluminescence (PL) quenching and photoelectric properties of the quantum dots. The aromatic ligand capped CdSe quantum dots are prepared through ligand exchange with trioctylphosphine oxide (TOPO) capped CdSe quantum dots. The XPS surface chemistry analysis and elemental analysis has confirmed the success of ligand exchange from TOPO to aromatic ligands. Both XRD and HRTEM-SAED studies indicate the crystalline structure of CdSe quantum dots not only remains but is also improved by the ligand exchange of TOPO with thiol molecules. Time resolved PL decay measurements indicate thiophenol and p-hydroxythiophenol ligands effectively quench the emission and have much shorter PL lifetimes than that of TOPO and that of α-toluenethiol. Thus, both thiophenol and p-hydroxythiophenol can act as an effective acceptor for photogenerated holes through aromatic π-electrons. Thiophenol also exhibits good charge transport behavior showing a 10-fold increase in short circuit current density (Isc) as compared with TOPO in the photocurrent study of fabricated photovoltaic devices.

Graphical abstract: Enhancing photoluminescence quenching and photoelectric properties of CdSe quantum dots with hole accepting ligands

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Supplementary files

Article information


Submitted
03 Oct 2007
Accepted
10 Dec 2007
First published
03 Jan 2008

J. Mater. Chem., 2008,18, 675-682
Article type
Paper

Enhancing photoluminescence quenching and photoelectric properties of CdSe quantum dots with hole accepting ligands

I. Liu, H. Lo, C. Chien, Y. Lin, C. Chen, Y. Chen, W. Su and S. Liou, J. Mater. Chem., 2008, 18, 675
DOI: 10.1039/B715253A

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