Issue 34, 2006

Photobleachable silicon-containing molecular resist for deep UV lithography

Abstract

A novel molecular resist material based on polyhedral oligomeric silsesquioxane, possessing diazoketo groups, was successfully synthesized for deep UV lithography. The initial lithographic evaluation of the molecular resist shows the potential of the new platform for the next generation resists.

Graphical abstract: Photobleachable silicon-containing molecular resist for deep UV lithography

Article information

Article type
Communication
Submitted
16 May 2006
Accepted
21 Jul 2006
First published
02 Aug 2006

J. Mater. Chem., 2006,16, 3448-3451

Photobleachable silicon-containing molecular resist for deep UV lithography

J. Kim, R. Ganesan, J. Choi, H. Yun, Y. Kwon, K. Kim and T. Oh, J. Mater. Chem., 2006, 16, 3448 DOI: 10.1039/B606937A

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