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Issue 21, 2004
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Combinatorial CVD of ZrO2 or HfO2 compositional spreads with SiO2 for high κ dielectrics

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Abstract

A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf or Zr) on a single Si(100) wafer. Tri(tert-butoxy)silanol and anhydrous metal nitrates of hafnium and zirconium were used to grow films at temperatures as low as 130 °C. The films were characterized by ellipsometry and Rutherford backscattering spectrometry. The compositional spreads of 5–54% of Hf in the HfO2/SiO2 system and 5–62% of Zr in the ZrO2/SiO2 system are proposed to result from chemistry occurring between the two precursors. A survey of possible reactions involved in the deposition is included. The dielectric constant ranged from approximately 4 in the silica-rich locations to 17 in the ZrO2-rich and HfO2-rich locations.

Graphical abstract: Combinatorial CVD of ZrO2 or HfO2 compositional spreads with SiO2 for high κ dielectrics

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Article information


Submitted
30 Apr 2004
Accepted
16 Jun 2004
First published
22 Sep 2004

J. Mater. Chem., 2004,14, 3203-3209
Article type
Paper

Combinatorial CVD of ZrO2 or HfO2 compositional spreads with SiO2 for high κ dielectrics

L. Zhong, Z. Zhang, S. A. Campbell and W. L. Gladfelter, J. Mater. Chem., 2004, 14, 3203
DOI: 10.1039/B406533F

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