Issue 12, 2004
From the journal:

Journal of Materials Chemistry

Synthesis, physical properties, and field-effect transistors of novel thiophene/thiazolothiazole co-oligomers

Shinji Ando,a   Jun-ichi Nishida,a   Youji Inoue,b   Shizuo Tokitob  and  Yoshiro Yamashita*a  

* Corresponding authors

a Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Japan
E-mail: yoshiro@echem.titech.ac.jp
Fax: +81-45-924-5489
Tel: +81-45-924-5571

b NHK Science and Technical Research Laboratories, Kinuta, Setagaya-ku, Tokyo, Japan
E-mail: tokito.s-eu@nhk.or.jp
Fax: +81-3-5494-3297
Tel: +81-3-5494-3284

Abstract

p-Channel OFETs using thiophene/thiazolothiazole co-oligomers as active layers have been successfully fabricated, and the field-effect mobilities for these oligomers were higher than those for thiophene/thiazole co-oligomers.

Graphical abstract: Synthesis, physical properties, and field-effect transistors of novel thiophene/thiazolothiazole co-oligomers

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Article information

DOI
https://doi.org/10.1039/B403699A
Article type
Communication
Submitted
10 Mar 2004
Accepted
22 Apr 2004
First published
17 May 2004

J. Mater. Chem., 2004,14, 1787-1790

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Synthesis, physical properties, and field-effect transistors of novel thiophene/thiazolothiazole co-oligomers

S. Ando, J. Nishida, Y. Inoue, S. Tokito and Y. Yamashita, J. Mater. Chem., 2004, 14, 1787 DOI: 10.1039/B403699A

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