Issue 10, 1994

A new single-layer plasma-developable photoresist using the catalysed crosslinking of poly(4-hydroxystyrene)via photogenerated acid

Abstract

A new single-layer, dry developable chemically amplified resist is described. The resist consists of poly(4-hydroxystyrene), 1,2,4,5-tetra(acetoxymethyl)benzene and triphenylsulfonium hexafluoroantimonate, and functions via crosslinking as a result of an acid-catalysed electrophilic aromatic substitution reaction. In contrast to the normal wet resist development process that leads to a negative-tone image, a gas-phase modification of the exposed polymer film, followed by reactive oxygen etching, leads to a positive-tone image. The post-exposure modification is accomplished using gaseous 1,1,1,3,3,3-hexamethyldisilazane, a reagent that is able to diffuse selectively into the non-exposed, non-crosslinked regions of the polymer film to react with the poly(4-hydroxystyrene) and form silyl ethers. Dry-development of the treated film in an O2 plasma removes those areas of the film that have remained unsilylated, producing a positive-tone relief image.

Article information

Article type
Paper

J. Mater. Chem., 1994,4, 1533-1538

A new single-layer plasma-developable photoresist using the catalysed crosslinking of poly(4-hydroxystyrene)via photogenerated acid

J. T. Fahey, J. M. J. Fréchet and Y. Shacham-Diamand, J. Mater. Chem., 1994, 4, 1533 DOI: 10.1039/JM9940401533

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