Issue 12, 1990

Thermodynamic analysis of pH-FET and ISFET response

Abstract

The Gibbs adsorption equation has been applied to electrolyte/insulator/semiconductor systems corresponding to those used for chemical field-effect transistors. It is shown that the response of these devices should be 59 mV per decade. The present analysis does not require the a priori assumption of any physical model of the interfacial region.

Article information

Article type
Paper

J. Chem. Soc., Faraday Trans., 1990,86, 2249-2252

Thermodynamic analysis of pH-FET and ISFET response

J. Tietje-Girault and H. H. Girault, J. Chem. Soc., Faraday Trans., 1990, 86, 2249 DOI: 10.1039/FT9908602249

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