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Volume 213, 2019
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Article type: Front/Back Matter
DOI: 10.1039/C9FD90004G
Faraday Discuss., 2019,213, 589-589

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    Correction: RRAM-based synapse devices for neuromorphic systems

    Faraday Discuss., 2019, 213, 589
    DOI: 10.1039/C9FD90004G