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Volume 131, 2006
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Gating current flowing through molecules in metal–molecules–metal junctions

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Abstract

We have assembled two junctions that incorporate redox sites between Hg electrodes by different interactions. In the first junction, Hg-SAM-R//R-SAM–Hg, the redox site (R) are covalently linked to each electrode in self assembled monolayers (SAM-R). In the second junction, Hg–SAM//R//SAM–Hg, the redox sites dissolved in solution are trapped by electrostatic interaction at the SAM formed at the electrodes. The current flowing through these junctions can be controlled by adjusting the potential applied at the electrodes with respect to the redox potential of the species by using an electrochemical system. The current flowing in these two junctions is mediated by the redox sites through different mechanisms. In particular, the current flowing through the Hg–SAM-R//R-SAM–Hg junction occurs through a self exchange mechanism between the redox sites organized at each electrode, while the current flowing through the Hg–SAM//R//SAM–Hg junction is dominated by a redox-cycling mechanism. The systems described here are easy to assemble, well-characterized, yield reproducible data and make it easy to modify the electrical properties of the junctions by changing the nature of the redox centres. For these characteristics they are well suited for collecting fundamental information relevant to the fabrication of molecular switches.

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Publication details

The article was received on 27 Apr 2005, accepted on 28 Jun 2005 and first published on 11 Oct 2005


Article type: Paper
DOI: 10.1039/B505860K
Citation: Faraday Discuss., 2006,131, 197-203

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    Gating current flowing through molecules in metal–molecules–metal junctions

    E. Tran, M. Duati, G. M. Whitesides and M. A. Rampi, Faraday Discuss., 2006, 131, 197
    DOI: 10.1039/B505860K

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