Solar energy conversion properties and defect physics of ZnSiP2

Abstract

Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP₂ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP₂ photovoltaic device. We show that ZnSiP₂ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III–V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP₂ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP₂ and related materials as photovoltaic absorber materials.