Issue 7, 2013

Ultrathin amorphous zinc-tin-oxidebuffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

Abstract

We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.

Graphical abstract: Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

Supplementary files

Article information

Article type
Communication
Submitted
22 Dec 2012
Accepted
10 Apr 2013
First published
15 Apr 2013
This article is Open Access
Creative Commons BY license

Energy Environ. Sci., 2013,6, 2112-2118

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

Y. S. Lee, J. Heo, S. C. Siah, J. P. Mailoa, R. E. Brandt, S. B. Kim, R. G. Gordon and T. Buonassisi, Energy Environ. Sci., 2013, 6, 2112 DOI: 10.1039/C3EE24461J

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