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Issue 7, 2013
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Ultrathin amorphous zinc-tin-oxidebuffer layer for enhancing heterojunction interface quality in metal-oxide solar cells†

Yun Seog Lee,‡a   Jaeyeong Heo,‡bc   Sin Cheng Siah,a   Jonathan P. Mailoa,a   Riley E. Brandt,a   Sang Bok Kim,b   Roy G. Gordonb  and  Tonio Buonassisi*a  
Author affiliations

* Corresponding authors

a Massachusetts Institute of Technology, Cambridge, MA 02139, USA
E-mail: buonassisi@mit.edu

b Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA

c Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea

Abstract

We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.

Graphical abstract: Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

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Article information

https://doi.org/10.1039/C3EE24461J
Submitted
22 Dec 2012
Accepted
10 Apr 2013
First published
15 Apr 2013
This article is Open Access
Creative Commons BY license
Energy Environ. Sci., 2013,6, 2112-2118
Article type
Communication
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Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

Y. S. Lee, J. Heo, S. C. Siah, J. P. Mailoa, R. E. Brandt, S. B. Kim, R. G. Gordon and T. Buonassisi, Energy Environ. Sci., 2013, 6, 2112
DOI: 10.1039/C3EE24461J

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