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Issue 5, 2009
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Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines

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Abstract

Near-IR dye sensitized solar cells are very interesting due to their potential applications in panchromatic cells, semi-transparent windows and in tandem cells. In this work we show the utilization of axially anchored Si-naphthalocyanine dye in the spectral sensitization of TiO2 nanostructured photoelectrodes. We report the first successful evaluation of a naphthalocyanine in the production of sensitized photocurrent with maximum incident photon to current efficiency (IPCE) at λ ∼ 790 nm.

Graphical abstract: Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines

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Publication details

The article was received on 19 Dec 2008, accepted on 26 Feb 2009 and first published on 13 Mar 2009


Article type: Paper
DOI: 10.1039/B822954F
Citation: Energy Environ. Sci., 2009,2, 529-534

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    Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines

    L. Macor, F. Fungo, T. Tempesti, E. N. Durantini, L. Otero, E. M. Barea, F. Fabregat-Santiago and J. Bisquert, Energy Environ. Sci., 2009, 2, 529
    DOI: 10.1039/B822954F

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