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Issue 41, 2020
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(HPy)2(Py)CuBi3I12, a low bandgap metal halide photoconductor

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Abstract

Bismuth halides represent an emergent class of materials that combines semiconductor properties with non-toxic constituents. However, many simple bismuth halide compounds feature bandgaps that are significantly higher than those of the lead halide perovskites, which they are supposed to replace. One way to address this issue is the preparation of multinary metal halide materials that feature an additional metal ion. Here, we report on the synthesis and properties of (HPy)2(Py)CuBi3I12 (1) a new copper iodido bismuthate, a photoconductor, which shows a low band gap of 1.59 eV and good thermal and air stability.

Graphical abstract: (HPy)2(Py)CuBi3I12, a low bandgap metal halide photoconductor

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Supplementary files

Article information


Submitted
05 Oct 2020
Accepted
09 Oct 2020
First published
15 Oct 2020

Dalton Trans., 2020,49, 14397-14400
Article type
Communication

(HPy)2(Py)CuBi3I12, a low bandgap metal halide photoconductor

J. Möbs, M. Gerhard and J. Heine, Dalton Trans., 2020, 49, 14397
DOI: 10.1039/D0DT03427D

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