An electronic structure governed by the displacement of the indium site in In–S6 octahedra: LnOInS2 (Ln = La, Ce, and Pr)

Hiroaki Ito; Akira Miura; Yosuke Goto; Yoshikazu Mizuguchi; Chikako Moriyoshi; Yoshihiro Kuroiwa; Masaki Azuma; Jinjia Liu; Xiao-Dong Wen; Shunta Nishioka; Kazuhiko Maeda; Yuji Masubuchi; Nataly Carolina Rosero-Navarro; Kiyoharu Tadanaga

doi:10.1039/C9DT01562K

An electronic structure governed by the displacement of the indium site in In–S₆ octahedra: LnOInS₂ (Ln = La, Ce, and Pr)†

Hiroaki Ito,^a Akira Miura,

*^b Yosuke Goto,

^c Yoshikazu Mizuguchi,

^c Chikako Moriyoshi,

^d Yoshihiro Kuroiwa,

^d Masaki Azuma,

^e Jinjia Liu,^f Xiao-Dong Wen,

^f Shunta Nishioka,

^gh Kazuhiko Maeda,

^g Yuji Masubuchi,

^b Nataly Carolina Rosero-Navarro

^b and Kiyoharu Tadanaga

^b

Author affiliations

* Corresponding authors

^a Graduate School of Chemical Sciences and Engineering, Hokkaido University, Kita 13, Nishi 8, Sapporo 060-8628, Japan

^b Faculty of Engineering, Hokkaido University, Kita 13, Nishi 8, Sapporo 060-8628, Japan
E-mail: amiura@eng.hokudai.ac.jp

^c Department of Physics, Tokyo Metropolitan University, 1-1 Minami-osawa, Hachioji, Tokyo 192-0397, Japan

^d Department of Physical Science, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8526, Japan

^e Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

^f State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, P. R. China

^g Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1-NE-2 Ookayama, Meguro-ku, Tokyo 152-8550, Japan

^h Japan Society for the Promotion of Science, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan

Abstract

An extremely large displacement of the indium site in In–S₆ octahedra in LnOInS₂ (Ln = La, Ce, and Pr) was found in synchrotron X-ray diffraction. LaOInS₂ with off-center indium in In–S₆ octahedra exhibited a wider optical band gap than CeOInS₂ and PrOInS₂ with on-center indium. Therefore, the electronic structure of LnOInS₂ is governed by the indium site with an extremely large displacement. All LnOInS₂ produced H₂ gas under visible light irradiation in the presence of sacrificial electron donors.

Dalton Transactions

An electronic structure governed by the displacement of the indium site in In–S₆ octahedra: LnOInS₂ (Ln = La, Ce, and Pr)†

Abstract

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An electronic structure governed by the displacement of the indium site in In–S₆ octahedra: LnOInS₂ (Ln = La, Ce, and Pr)

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