Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.

Issue 44, 2018
Previous Article Next Article

Atomic/molecular layer deposition of Cu–organic thin films

Author affiliations


The gas-phase atomic/molecular layer deposition (ALD/MLD) technique is strongly emerging as a viable approach to fabricate new exciting inorganic–organic hybrid thin-film materials. However, much less effort has been made to develop new precursors specifically intended for ALD/MLD; this applies to both the organic and inorganic precursors, and in the latter case in particular to transition metal precursors. Here we introduce copper bisdimethylaminopropoxide (Cu(dmap)2) as a promising transition metal precursor for ALD/MLD to be combined with a variety of organic precursors with different backbones and functional groups, i.e. hydroquinone (HQ), terephthalic acid (TPA), 4,4′-oxydianiline (ODA), p-phenylenediamine (PPDA) and 1,4-benzenedithiol (BDT). Hybrid Cu–organic thin films were obtained from all five organic precursors with appreciably high growth rates ranging from 1.0 to 2.6 Å per cycle. However, the Cu(dmap)2 + HQ process was found to yield hybrid Cu–organic films only at temperatures below 120 °C, while at higher temperatures metallic Cu films were obtained. The films were characterized by XRR, GIXRD, FTIR, Raman, XPS and UV-Vis spectroscopy.

Graphical abstract: Atomic/molecular layer deposition of Cu–organic thin films

Back to tab navigation

Article information

15 Sep 2018
08 Oct 2018
First published
09 Oct 2018

Dalton Trans., 2018,47, 15791-15800
Article type

Atomic/molecular layer deposition of Cu–organic thin films

D. J. Hagen, L. Mai, A. Devi, J. Sainio and M. Karppinen, Dalton Trans., 2018, 47, 15791
DOI: 10.1039/C8DT03735C

Social activity

Search articles by author