Exclusion of metal oxide by an RF sputtered Ti layer in flexible perovskite solar cells: energetic interface between a Ti layer and an organic charge transporting layer

Abstract

In this work, the effects of a titanium (Ti) layer on the charge transport and recombination rates of flexible perovskite solar cells were studied. Ti as an efficient barrier layer was deposited directly on PET-ITO flexible substrates through RF magnetic sputtering using a Ti-source and a pressure of ∼5 mTorr. A Ti coated PET-ITO was used for the fabrication of a flexible perovskite solar cell without using any metal oxide layer. The fabricated flexible perovskite solar cell was composed of a PET-ITO/Ti/perovskite (CH₃NH₃PbI₃)/organic hole transport layer of 2,2′,7,7′-tetrakis [N,N′-di-p-methoxyphenylamine]-9,9′-spirobifluorene (spiro-OMeTAD)-Li-TFSI/Ag. A high conversion efficiency of ∼8.39% along with a high short circuit current (J_SC) of ∼15.24 mA cm⁻², an open circuit voltage (V_OC) of ∼0.830 V and a high fill factor (FF) of ∼0.66 was accomplished by the fabricated flexible perovskite solar cell under a light illumination of ∼100 mW cm⁻² (1.5 AM). Intensity-modulated photocurrent (IMPS)/photovoltage spectroscopy (IMVS) studies demonstrated that the fabricated flexible perovskite solar cell considerably reduced the recombination rate.