Superior hydrogen storage and electrochemical properties of MgxNi100−x/Pd films at room temperature
Abstract
The MgxNi100−x films of 100 nm have been prepared by magnetron co-sputtering Mg and Ni targets, and a Pd layer of 10 nm was deposited on these films by magnetron sputtering a Pd target. Mg2Ni and MgNi2 are directly generated during the co-sputtering process in the Mg84Ni16/Pd and Mg48Ni52/Pd films. The hydrogen storage properties of the films under 0.1 MPa H2 at 298 K were investigated. The