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Issue 43, 2008
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A developed Ullmann reaction to III–V semiconductor nanocrystals in sealed vacuum tubes

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Abstract

Group III–V (13–15, III = Ga, In, and V = P, As) semiconductor nanocrystals were effectively obtained via a developed Ullmann reaction route through the reactions of preformed nanoscale metallic indium or commercial gallium with triphenylphosphine (PPh3) and triphenylarsine (AsPh3) in sealed vacuum quartz tubes under moderate conditions at 320–400 °C for 8–24 h. The developed synthetic strategy in sealed vacuum tubes extends the synthesis of III–V semiconductor materials, and the air-stable PPh3 and AsPh3 with low toxicity provide good alternative pnicogen precursors for the synthesis of III–V nanocrystals. The analysis of XRD, ED and HRTEM established the production of one-dimensional (1D) metastable wurtzite (W) InP, InAs and GaP nanostructures in the zinc blende (ZB) products. Further investigations showed that 1D W nanostructures resulted from kinetic effects under the moderate synthetic conditions employed and the steric effect of PPh3 and AsPh3, and that the tendency for the synthesis of III–V nanocrystals was in the orders of IIIP > IIIAs and GaV > InV on the basis of experiments and thermodynamic calculations. Meanwhile, the microstructures and growth mechanism of the III–V nanocrystals were investigated.

Graphical abstract: A developed Ullmann reaction to III–V semiconductor nanocrystals in sealed vacuum tubes

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Supplementary files

Article information


Submitted
03 Jun 2008
Accepted
29 Jul 2008
First published
25 Sep 2008

Dalton Trans., 2008, 6060-6066
Article type
Paper

A developed Ullmann reaction to III–V semiconductor nanocrystals in sealed vacuum tubes

J. Wang and Q. Yang, Dalton Trans., 2008, 6060
DOI: 10.1039/B809442J

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