Issue 9, 2004

Preparation and topotactical oxidation of ScVO3 with bixbyte structure: a low-temperature route to stabilize the new defect fluorite ScVO3.5 metastable phase

Abstract

ScVO3 has been prepared by controlled reduction of a ScVO4 precursor under an H2/N2 flow at 1250 °C. The crystal structure of this material has been studied at room temperature by Rietveld refinement of high-resolution neutron powder diffraction (NPD) data. Sc3+ and V3+ are distributed at random over the metal sites of a C-M2O3 bixbyite-type structure, space group Ia[3 with combining macron], a = 9.6182(1) Å. The thermal analysis of ScVO3 in an air flow shows two subsequent oxidation processes, with a final reversal to ScVO4 above 600 °C. An intermediate phase of composition ScVO3.5, containing V4+ cations, can be isolated by isothermal annealing at 350 °C in air. This metastable phase has been identified by X-ray diffraction (XRD) as a fluorite-type oxide (space group Fm[3 with combining macron]m, a = 4.947(2) Å), also showing a random distribution of Sc and V cations over the metal positions. The Rietveld refinement of the ScVO3.5 structure from powder XRD data in a fluorite structural model yields abnormally high thermal factors for the oxygen atoms, suggesting oxygen mobility in this metastable material.

Graphical abstract: Preparation and topotactical oxidation of ScVO3 with bixbyte structure: a low-temperature route to stabilize the new defect fluorite ScVO3.5 metastable phase

Article information

Article type
Paper
Submitted
29 Jan 2004
Accepted
19 Mar 2004
First published
02 Apr 2004

Dalton Trans., 2004, 1294-1297

Preparation and topotactical oxidation of ScVO3 with bixbyte structure: a low-temperature route to stabilize the new defect fluorite ScVO3.5 metastable phase

J. A. Alonso, M. Teresa. Casais and M. J. Martínez-Lope, Dalton Trans., 2004, 1294 DOI: 10.1039/B401424C

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