Issue 24, 1998

Reaction of tertiary phosphine selenides, R3PSe (R = Me2N, Et2N or C6H11), with dibromine. The first reported examples of 1∶1 addition

Abstract

The R3PSeBr2 compounds (R = Me2N, Et2N or C6H11) have been prepared and characterised by 31P-{H} and infrared spectroscopy. The compounds R3PSeBr2 (R = Me2N or C6H11) have also been crystallographically characterised. In contrast to the analogous diiodo compounds R3PSeI2 (which have a molecular Ψ-tetrahedral charge-transfer structure, R3PSeI–I), the R3PSeBr2 compounds adopt Ψ-trigonal bipyramids at the selenium centre (taking account of the stereochemically active lone pairs). The crystal structure of (Me2N)3PSeBr2 exhibits very different d (Se–Br), 2.602(2) and 2.544(2) Å. This phenomenon is reasoned to be due to the fact that both staggered and eclipsed Se–Br bonds are observed in the structure. The crystal structure of (C6H11)3PSeBr2 shows two crystallographically independent molecules in the asymmetric unit, d (Se–Br) being identical in one molecule, 2.568(3) and 2.566(3) Å, but significantly different in the second molecule, 2.591(3) and 2.556(3) Å. A possible explanation for this is the presence of a close non-bonded Br  · · ·  Br contact in this second (C6H11)3PSeBr2 molecule. The compounds R3PSeBr2 (R = Me2N or C6H11) both exhibit P–Se bonds typical of those expected for single bonds, 2.262(2) and 2.263(2) average, respectively, again in contrast to the analogous diiodo compounds, R3PSeI2, in which significant P–Se double bond character was retained. The 31P-{H} NMR and infrared spectroscopic data for R3PSeBr2 (R = Me2N, Et2N or C6H11) are discussed with respect to those of the parent tertiary phosphine selenide, R3PSe.

Article information

Article type
Paper

J. Chem. Soc., Dalton Trans., 1998, 4201-4204

Reaction of tertiary phosphine selenides, R3PSe (R = Me2N, Et2N or C6H11), with dibromine. The first reported examples of 1∶1 addition

S. M. Godfrey, S. L. Jackson, C. A. McAuliffe and R. G. Pritchard, J. Chem. Soc., Dalton Trans., 1998, 4201 DOI: 10.1039/A807892K

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