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Issue 16, 2017
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Extreme ultraviolet resist materials for sub-7 nm patterning

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Abstract

Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

Graphical abstract: Extreme ultraviolet resist materials for sub-7 nm patterning

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Article information


Submitted
31 Jan 2017
First published
26 Jun 2017

Chem. Soc. Rev., 2017,46, 4855-4866
Article type
Tutorial Review

Extreme ultraviolet resist materials for sub-7 nm patterning

L. Li, X. Liu, S. Pal, S. Wang, C. K. Ober and E. P. Giannelis, Chem. Soc. Rev., 2017, 46, 4855
DOI: 10.1039/C7CS00080D

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