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Issue 13, 2013
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Hydrothermal synthetic strategies of inorganic semiconducting nanostructures

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Abstract

Because of their unique chemical and physical properties, inorganic semiconducting nanostructures have gradually played a pivotal role in a variety of research fields, including electronics, chemical reactivity, energy conversion, and optics. A major feature of these nanostructures is the quantum confinement effect, which strongly depends on their size, shape, crystal structure and polydispersity. Among all developed synthetic methods, the hydrothermal method based on a water system has attracted more and more attention because of its outstanding advantages, such as high yield, simple manipulation, easy control, uniform products, lower air pollution, low energy consumption and so on. Precise control over the hydrothermal synthetic conditions is a key to the success of the preparation of high-quality inorganic semiconducting nanostructures. In this review, only the representative hydrothermal synthetic strategies of inorganic semiconducting nanostructures are selected and discussed. We will introduce the four types of strategies based on exterior reaction system adjustment, namely organic additive- and template-free hydrothermal synthesis, organic additive-assisted hydrothermal synthesis, template-assisted hydrothermal synthesis and substrate-assisted hydrothermal synthesis. In addition, the two strategies based on exterior reaction environment adjustment, including microwave-assisted and magnetic field-assisted hydrothermal synthesis, will be also described. Finally, we conclude and give the future prospects of this research area.

Graphical abstract: Hydrothermal synthetic strategies of inorganic semiconducting nanostructures

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Article information


Submitted
15 Jan 2013
First published
08 Apr 2013

Chem. Soc. Rev., 2013,42, 5714-5743
Article type
Review Article

Hydrothermal synthetic strategies of inorganic semiconducting nanostructures

W. Shi, S. Song and H. Zhang, Chem. Soc. Rev., 2013, 42, 5714
DOI: 10.1039/C3CS60012B

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