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Issue 20, 2020
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Size effect on excess resistivity induced by hydrogen in ultra-thin vanadium systems

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Abstract

Through combining a four-point probe and an optical technique, a profound vanadium(V) size effect on the change in excess resistivity during hydrogenation is observed in Fen/V7n (n = 2, 4) superlattices at c ≥ 0.05 H/V. This phenomenon highly emphasizes the effect of interface and H–H interaction on the electrical properties of hydrogen in these systems.

Graphical abstract: Size effect on excess resistivity induced by hydrogen in ultra-thin vanadium systems

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Article information


Submitted
02 Apr 2020
Accepted
04 May 2020
First published
05 May 2020

Phys. Chem. Chem. Phys., 2020,22, 11609-11613
Article type
Paper

Size effect on excess resistivity induced by hydrogen in ultra-thin vanadium systems

W. Huang, M. Brischetto, P. Steichen, M. Li and B. Hjörvarsson, Phys. Chem. Chem. Phys., 2020, 22, 11609
DOI: 10.1039/D0CP01779E

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