Size effect on excess resistivity induced by hydrogen in ultra-thin vanadium systems
Abstract
Through combining a four-point probe and an optical technique, a profound vanadium(V) size effect on the change in excess resistivity during hydrogenation is observed in Fen/V7n (n = 2, 4) superlattices at c ≥ 0.05 H/V. This phenomenon highly emphasizes the effect of interface and H–H interaction on the electrical properties of hydrogen in these systems.