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Issue 14, 2020
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The total dose effect of γ-ray induced domain evolution on α-In2Se3 nanoflakes

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Abstract

Two-dimensional ferroelectric materials can maintain stable polarization with atomic layer thickness, and they have a wide range of technological applications in transistors, resistive memories, energy collectors and other multi-functional sensors for highly integrated flexible electronics. Domain evolution should be considered when 2d ferroelectric material-based devices are applied in a radiation environment, which may induce radiation damage and performance degradation. In this work, we investigate the domain evolution and photodetection performance degradation of α-In2Se3 nanoflakes induced by the total dose effect of 60Co γ-rays. The phonon modes change with an increase in total dose, while the domain structure changes in α-In2Se3 based transistors. Domain evolution may be one of the main reasons for the photoresponsivity degradation of these transistors. This investigation can provide a solid base for future research, and immediate applications in 2d ferroelectric material-based devices can be contemplated.

Graphical abstract: The total dose effect of γ-ray induced domain evolution on α-In2Se3 nanoflakes

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Supplementary files

Article information


Submitted
30 Jan 2020
Accepted
13 Mar 2020
First published
30 Mar 2020

Phys. Chem. Chem. Phys., 2020,22, 7160-7164
Article type
Communication

The total dose effect of γ-ray induced domain evolution on α-In2Se3 nanoflakes

P. Hou, Y. Chen, X. Wang, Y. Lv, H. Guo, J. Wang, X. Zhong and X. Ouyang, Phys. Chem. Chem. Phys., 2020, 22, 7160
DOI: 10.1039/D0CP00512F

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