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Issue 46, 2019
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Enhanced solvent resistance and electrical performance of electrohydrodynamic jet printed PEDOT:PSS composite patterns: effects of hardeners on the performance of organic thin-film transistors

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Abstract

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) is of great interest as a promising metal-free electrode material for future electronic devices. Several printing techniques have been developed to generate PEDOT:PSS patterns. In this study, we introduced a silicon-based hardener into PEDOT:PSS composites to prepare conductive ink for the purpose of fabricating solvent-resistant PEDOT:PSS composite patterns. Electrohydrodynamic (EHD) jet printing enabled the direct patterning of PEDOT:PSS and hardener composites that exhibited improved electrical conductivity and solvent resistance, which are advantageous properties for efficient charge injection when semiconductor materials are coated onto pre-deposited PEDOT:PSS composite electrodes. By using EHD jet printed PEDOT:PSS composites as source and drain electrodes, bottom-gate–bottom-contact organic thin-film transistors (OTFTs) were fabricated. The resulting OTFTs with PEDOT:PSS and hardener composite electrodes exhibited superior electrical performance compared to OTFTs with electrodes without hardener. Finally, OTFTs with both EHD jet printed electrodes and semiconductors were fabricated and analyzed.

Graphical abstract: Enhanced solvent resistance and electrical performance of electrohydrodynamic jet printed PEDOT:PSS composite patterns: effects of hardeners on the performance of organic thin-film transistors

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Supplementary files

Article information


Submitted
02 Sep 2019
Accepted
02 Oct 2019
First published
12 Nov 2019

Phys. Chem. Chem. Phys., 2019,21, 25690-25699
Article type
Paper

Enhanced solvent resistance and electrical performance of electrohydrodynamic jet printed PEDOT:PSS composite patterns: effects of hardeners on the performance of organic thin-film transistors

X. Tang, H. Kwon, H. Ye, J. Y. Kim, J. Lee, Y. J. Jeong and S. H. Kim, Phys. Chem. Chem. Phys., 2019, 21, 25690
DOI: 10.1039/C9CP04864B

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