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Issue 11, 2019
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Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

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Abstract

The atomic layer etching of chlorinated germanium surfaces under argon bombardment was simulated using molecular dynamics with a newly fitted Tersoff potential. The chlorination energy determines the threshold energy for etching and the number of etched atoms in the bombardment phase. Etch rate is determined by bombardment energy.

Graphical abstract: Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

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Publication details

The article was received on 08 Jan 2019, accepted on 19 Feb 2019 and first published on 20 Feb 2019


Article type: Communication
DOI: 10.1039/C9CP00125E
Phys. Chem. Chem. Phys., 2019,21, 5898-5902

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    Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

    S. Zhang, Y. Huang, G. Tetiker, S. Sriraman, A. Paterson and R. Faller, Phys. Chem. Chem. Phys., 2019, 21, 5898
    DOI: 10.1039/C9CP00125E

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