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Issue 37, 2018
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Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites

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Abstract

Resistive random-access memory (ReRAM) is expected to be the next-generation non-volatile memory device because of its fast operation speed and low power consumption. Switching media in most ReMAM are oxides which are rigid and require high-temperature processing. Here, we review two emerging types of low-cost solution-processed ReRAMs with sandwich structures: one is hybrid nanocomposites with charge-trapping nanoparticles (NPs) embedded in a polymer matrix, and the other is hybrid halide perovskites which have been intensively investigated recently for optoelectronic applications. We will review the recent developments in materials selection, device performance and operation mechanisms. Resistive switching in hybrid materials and composites is ubiquitous because of the abundant existence of charge-trapping defects and interfaces. The future challenges and potential breakthroughs will also be outlined.

Graphical abstract: Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites

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Publication details

The article was received on 21 Jun 2018, accepted on 28 Aug 2018 and first published on 28 Aug 2018


Article type: Perspective
DOI: 10.1039/C8CP03945C
Citation: Phys. Chem. Chem. Phys., 2018,20, 23837-23846

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    Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites

    Y. Shan, Z. Lyu, X. Guan, A. Younis, G. Yuan, J. Wang, S. Li and T. Wu, Phys. Chem. Chem. Phys., 2018, 20, 23837
    DOI: 10.1039/C8CP03945C

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