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Issue 37, 2018
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Controlling ion transport through nanopores: modeling transistor behavior

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Abstract

We present a modeling study of a nanopore-based transistor computed by a mean-field continuum theory (Poisson–Nernst–Planck, PNP) and a hybrid method including particle simulation (Local Equilibrium Monte Carlo, LEMC) that is able to take ionic correlations into account including the finite size of ions. The model is composed of three regions along the pore axis with the left and right regions determining the ionic species that is the main charge carrier, and the central region tuning the concentration of that species and, thus, the current flowing through the nanopore. We consider a model of small dimensions with the pore radius comparable to the Debye-screening length (Rpore/λD ≈ 1), which, together with large surface charges provides a mechanism for creating depletion zones and, thus, controlling ionic current through the device. We report the scaling behavior of the device as a function of the Rpore/λD parameter. Qualitative agreement between PNP and LEMC results indicates that mean-field electrostatic effects predominantly determine device behavior.

Graphical abstract: Controlling ion transport through nanopores: modeling transistor behavior

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Publication details

The article was received on 20 Jun 2018, accepted on 31 Aug 2018 and first published on 31 Aug 2018


Article type: Paper
DOI: 10.1039/C8CP03918F
Citation: Phys. Chem. Chem. Phys., 2018,20, 24156-24167

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    Controlling ion transport through nanopores: modeling transistor behavior

    E. Mádai, B. Matejczyk, A. Dallos, M. Valiskó and D. Boda, Phys. Chem. Chem. Phys., 2018, 20, 24156
    DOI: 10.1039/C8CP03918F

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